Band alignment at β-(AlxGa1−x)2O3/β-Ga2O3 (100) interface fabricated by pulsed-laser deposition-Reference-Cited by-同舟云学术

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Band alignment at β-(AlxGa1−x)2O3/β-Ga2O3 (100) interface fabricated by pulsed-laser deposition

Published:2018-06-04 Issue:23 Volume:112 Page:232103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wakabayashi Ryo¹,Hattori Mai¹,Yoshimatsu Kohei¹^ORCID,Horiba Koji²³,Kumigashira Hiroshi²³,Ohtomo Akira¹³^ORCID

Affiliation:

1. Department of Chemical Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan

2. Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan

3. Materials Research Center for Element Strategy (MCES), Tokyo Institute of Technology, Midori-ku, Yokohama 226-8503, Japan

Funder

MEXT Element Strategy Initiative to Form Core Research Center

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5027005

Reference33 articles.

1. Polymorphism of Ga2O3 and the System Ga2O3—H2O

2. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy

3. Epitaxial growth and electric properties of γ-Al2O3(110) films on β-Ga2O3(010) substrates

4. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

5. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping

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1. Unraveling intrinsic mobility limits in two-dimensional (AlxGa1−x)2O3 alloys;Journal of Applied Physics;2024-06-11

2. Bandgap engineering and Schottky barrier modulation of ultra-wide bandgap Si-doped β-(Al_xGa_1−x)₂O₃ single crystals;Journal of Materials Chemistry C;2024

3. First-principles study on the structural and electronic properties of β-(AlxGa1-x)2O3 alloy;Journal of Physics and Chemistry of Solids;2024-01

4. Experimental determination of critical thickness limitations of (010) β -(AlxGa1−x)2O3 heteroepitaxial films;Applied Physics Letters;2023-11-27

5. (AlxGa1-x)2O3-based materials: Growth, properties, and device applications;Journal of Alloys and Compounds;2023-10

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