Bandgap engineering and Schottky barrier modulation of ultra-wide bandgap Si-doped β-(AlxGa1−x)2O3 single crystals-Reference-Cited by-同舟云学术

Bandgap engineering and Schottky barrier modulation of ultra-wide bandgap Si-doped β-(Al_xGa_1−x)₂O₃ single crystals

Published:2024 Issue:15 Volume:12 Page:5631-5638
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Liu Yiyuan¹²,He Qiming³,Mu Wenxiang¹²^ORCID,Jia Zhitai¹^ORCID,Xu Guangwei³,Long Shibing³,Tao Xutang¹²^ORCID

Affiliation:

1. State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Institute of Crystal Materials, Shandong University, Jinan, Shandong, 250100, China

2. Shenzhen Research Institute of Shandong University, Shenzhen, 518057, China

3. School of Microelectronics, University of Science and Technology of China, Hefei 230026, China

Abstract

In order to balance the contradiction between on and off performances of the Schottky diodes, Si-doped β-(AlxGa1−x)2O3 (β-AlGaO) single crystals were designed based on the bandgap and impurity engineering of β-Ga2O3.

Funder

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

Shenzhen Fundamental Research Program

Special Project for Research and Development in Key areas of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC04170K

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