Epitaxial growth and electric properties of γ-Al2O3(110) films on β-Ga2O3(010) substrates-Reference-Cited by-同舟云学术

Epitaxial growth and electric properties of γ-Al2O3(110) films on β-Ga2O3(010) substrates

Published:2016-10-21 Issue:12 Volume:55 Page:1202B6
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hattori Mai,Oshima Takayoshi,Wakabayashi Ryo,Yoshimatsu Kohei,Sasaki Kohei,Masui Takekazu,Kuramata Akito,Yamakoshi Shigenobu,Horiba Koji,Kumigashira Hiroshi,Ohtomo Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=12/a=1202B6/pdf

Reference30 articles.

1. Wide-bandgap semiconductor materials: For their full bloom

2. Recent progress in Ga2O3power devices

3. Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 ( 2¯01)

4. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy

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