Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 ( 2¯01)
Author:
Affiliation:
1. Electrical Engineering Department, University at Buffalo, Buffalo, New York 14260, USA
2. Chemistry Department, University at Buffalo, Buffalo, New York 14260, USA
Funder
Office of Naval Research (ONR)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4915262
Reference30 articles.
1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3
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4. Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
5. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
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