Surface potential barrier inm-plane GaN studied by contactless electroreflectance
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Reference31 articles.
1. Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2. Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method
3. Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage
4. AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation
5. Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current Collapse
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Composition dependence of intrinsic surface states and Fermi-level pinning at ternary AlxGa1−xN m-plane surfaces;Journal of Vacuum Science & Technology A;2024-01-29
2. Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions;Journal of Applied Physics;2020-11-14
3. Depletion Layer Built-In Field at (1−100), (0001), and (000−1) GaN/Water Junction and Its Role in Semiconductor Nanowire Water Splitting;Advanced Materials Interfaces;2019-01-03
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