Depletion Layer Built-In Field at (1−100), (0001), and (000−1) GaN/Water Junction and Its Role in Semiconductor Nanowire Water Splitting-Reference-Cited by-同舟云学术

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Depletion Layer Built-In Field at (1−100), (0001), and (000−1) GaN/Water Junction and Its Role in Semiconductor Nanowire Water Splitting

Published:2019-01-03 Issue:4 Volume:6 Page:1801497
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Stokowski Hubert¹²^ORCID,Janicki Łukasz²^ORCID,Serafińczuk Jarosław³,Siekacz Marcin⁴,Skierbiszewski Czesław⁴⁵,Kudrawiec Robert²^ORCID

Affiliation:

1. Department of Applied Physics; Stanford University; Stanford CA 94305 USA

2. Faculty of Fundamental Problems of Technology; Wroclaw University of Science and Technology; Wybrzeże Wyspiańskiego 27 Wrocław PL-50370 Poland

3. Faculty of Microsystem Electronics and Photonics; Wroclaw University of Science and Technology; Janiszewskiego 11-17 Wrocław PL-50372 Poland

4. Institute of High-Pressure Physics; Polish Academy of Sciences; Sokołowska 29/37 Warsaw PL 01142 Poland

5. TopGaN Sp. z o.o.; Sokołowska 29/37 Warsaw PL-01142 Poland

Funder

NCBiR

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/admi.201801497/fullpdf

Reference49 articles.

1. Electrochemical Photolysis of Water at a Semiconductor Electrode

2. Direct splitting of water under visible light irradiation with an oxide semiconductor photocatalyst

3. Photocatalyst releasing hydrogen from water

4. Solar Water Splitting Cells

5. Wireless Solar Water Splitting Using Silicon-Based Semiconductors and Earth-Abundant Catalysts

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