Demonstration of AlGaN/GaN High Electron Mobility Transistors ona-Plane (11\bar20) Sapphire
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference12 articles.
1. A new buffer layer for high quality GaN growth by metalorganic vapor phase epitaxy
2. Growth and applications of Group III-nitrides
3. Epitaxial growth of gallium nitride thin films on A-Plane sapphire by molecular beam epitaxy
4. Misorientation-angle dependence of GaN layers grown on a-plane sapphire substrates by metalorganic chemical vapor deposition
5. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Growth Pressure on Graphene Direct Growth on an A-Plane Sapphire Substrate: Implications for Graphene-Based Electronic Devices;ACS Applied Nano Materials;2020-12-28
2. Non-polar and semi-polar ammonothermal GaN substrates;Semiconductor Science and Technology;2012-01-19
3. Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method;Journal of Applied Physics;2011-03-15
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