Growth and characterization of GaN on c‐plane (0001) sapphire substrates by plasma‐enhanced molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354285
Reference8 articles.
1. GaN, AlN, and InN: A review
2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
3. GaN Growth Using GaN Buffer Layer
4. In situ monitoring and Hall measurements of GaN grown with GaN buffer layers
5. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
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4. Polarization effects in self-organized InGaN/GaN quantum dots grown by RF-plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2009-03
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