The effects of Si doping on dislocation movement and tensile stress in GaN films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3553841
Reference38 articles.
1. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
2. Effect of threading defects on InGaN∕GaN multiple quantum well light emitting diodes
3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
4. Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE
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