Study on electron trapping and interface states of various gate dielectric materials in 4H–SiC metal-oxide-semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1312862
Reference12 articles.
1. 6H-silicon carbide devices and applications
2. High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistances
3. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
4. 2000 V 6H‐SiCp‐njunction diodes grown by chemical vapor deposition
5. Direct current characterization of depletion-mode 6HSiC MOSFETs from 294 to 723 K
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