TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing
Author:
Funder
Korea Electrotechnology Research Institute
Ministry of Science, ICT (MSIT), Korea
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference29 articles.
1. Improved 4H-SiC metal oxide semiconductor interface produced by using an oxidized SiN gate oxide that had undergone post-oxidation annealing
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4. Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures
5. Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres
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