Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures-Reference-Cited by-同舟云学术

Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures

Published:2016-03 Issue: Volume:58 Page:192-196
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Peng Zhaoyang,Wang Yiyu,Shen Huajun,Li Chengzhan,Wu Jia,Bai Yun,Liu Kean,Liu Xinyu

Funder

Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology

Institute of Microelectronics, Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

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3. Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(11–20) 4H-SiC interface;Dhar;Appl. Phys. Lett.,2004

4. Scaling beween mobility and interface state density in SiC MOSFETs;Rozen;IEEE Trans. Electron Devices,2011

5. Effects of interface state density on 4H-SiC n-channel field-effect mobility;Yoshioka;J. Appl. Phys.,2014

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