Investigation of the chemical composition profile of SiGe∕Si(001) islands by analytical transmission electron microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2751598
Reference11 articles.
1. Epitaxy of Nanostructures
2. Strain-induced island scaling during Si1−xGex heteroepitaxy
3. Strain relief via trench formation in Ge/Si(100) islands
4. Quantitative high resolution transmission electron microscopy of nanostructured semiconductors
5. Extended shape evolution of low mismatch Si1−xGex alloy islands on Si(100)
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2. Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications;Scientific Reports;2019-03-13
3. Stranski–Krastanov growth of (Si)Ge/Si(001): transmission electron microscopy compared with segregation theory;Materials Science and Technology;2018-04-02
4. Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure;Journal of Applied Physics;2018-01-21
5. Site-controlled SiGe islands on patterned Si(001): Morphology, composition profiles, and devices;physica status solidi (b);2012-02-20
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