Site-controlled SiGe islands on patterned Si(001): Morphology, composition profiles, and devices
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference77 articles.
1. Structural properties of self-organized semiconductor nanostructures
2. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
3. Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures
4. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
5. Transition States Between Pyramids and Domes During Ge/Si Island Growth
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth of SiGe epitaxial quantum dots on patterned Si (001) surfaces by in situ annealing of initially conformal layers;Journal of Applied Physics;2018-11-28
2. Consequences of elastic anisotropy in patterned substrate heteroepitaxy;Nanotechnology;2018-07-02
3. Interpolating function of the strain relief of epitaxial quantum dots via an alternative morphological descriptor;Physical Review B;2015-05-26
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