Strain relief via trench formation in Ge/Si(100) islands
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126698
Reference14 articles.
1. Annealing of Ge nanocrystals on Si(001) at550°C: Metastability of huts and the stability of pyramids and domes
2. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
3. STM study of the Ge growth mode on Si(001) substrates
4. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
5. Strain-Driven Alloying in Ge/Si(100) Coherent Islands
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4. Role of 2×1 surface reconstruction on Stranski–Krastanov growth illustrated using a modified solid-on-solid model;Journal of Crystal Growth;2017-01
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