Morphological evolution of Ge islands on the Si(100) surface: from huts to pits-Reference-Cited by-同舟云学术

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Morphological evolution of Ge islands on the Si(100) surface: from huts to pits

Published:2016-09-15 Issue:5 Volume:49 Page:384-387
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Zhang Yongping¹,Chen Zhiqian¹,Xu Guo Qin²

Affiliation:

1. Faculty of Materials and Energy; Southwest University; Chongqing 400715 China

2. Department of Chemistry; National University of Singapore; 3 Science Drive 3 Singapore 117543

Funder

Ministry of Education - Singapore

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference26 articles.

1. Growth and self-organization of SiGe nanostructures

2. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes

3. Transition States Between Pyramids and Domes During Ge/Si Island Growth

4. Photoluminescence study of the initial stages of island formation for Ge pyramids/domes and hut clusters on Si(001)

5. Equilibrium phase diagrams for the elongation of epitaxial quantum dots into hut-shaped clusters and quantum wires

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Steps and Ge epitaxy on vicinal Si (111) surfaces: An STM study;Surface Science;2020-06

2. TPD characterization of Al-OD-Si sites at the interface of bilayer Al0.42Si0.58O2/Ru(0001) thin-films.;Surface Science;2020-06

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