The origin of the energy-dose window in separation-by-implanted-oxygen materials processing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2917582
Reference24 articles.
1. See: SIMOX, edited by Maria J. Anc (The Institution of Electrical Engineers, Stevenage Herts, UK, 2004).
2. Counter‐oxidation of superficial Si in single‐crystalline Si on SiO2structure
3. Investigations on High‐Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers
4. Technological innovation in low-dose SIMOX wafers fabricated by an internal thermal oxidation (ITOX) process
5. Analysis of buried oxide layer formation and mechanism of threading dislocation generation in the substoichiometric oxygen dose region
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