Study of interface composition and quality in AlSb/InAs/AlSb quantum wells by Raman scattering from interface modes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106720
Reference10 articles.
1. High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers
2. High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers
3. Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface
4. Raman scattering study of InAs/GaInSb strained layer superlattices
5. Calculated longitudinal superlattice and interface phonons of superlattices
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2. Cyclotron resonance study in InAs/AlSb quantum well heterostructures with two occupied electronic subbands;Journal of Applied Physics;2012-05
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