Molecular beam epitaxial growth of AlSb/InAsSb heterostructures-Reference-Cited by-同舟云学术

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Molecular beam epitaxial growth of AlSb/InAsSb heterostructures

Published:2014-09 Issue: Volume:313 Page:479-483
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhang Yuwei,Zhang Yang,Guan Min,Cui Lijie,Li Yanbo,Wang Baoqiang,Zhu Zhanping,Zeng Yiping

Funder

National Natural Science Foundation of China

Beijing Natural Science Foundation

Beijing Nova Program

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference19 articles.

1. Molecular-beam epitaxial growth and characterization of AlxIn1−xSb/InSb quantum well structures

2. Electronic transport in modulation-doped InSb quantum well heterostructures

3. Uncooled high‐speed InSb field‐effect transistors

4. Antimonide-based diodes for terahertz mixers

5. Band parameters for III–V compound semiconductors and their alloys

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1. Interfaces-engineered M-structure for infrared detectors;Opto-Electronics Review;2024-04-11

2. Negative thermal expansion coefficient of Al pnictides –A systematic realistic pressure-dependent lattice dynamical study;Materials Science and Engineering: B;2024-04

3. Determination of lateral strain in InGaAsSb alloys and its effect on structural and optical properties;Journal of Materials Science;2023-10-30

4. Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy;Materials;2023-02-28

5. Negative Thermal Expansion Coefficient of Al Pnictides –A Systematic Realistic Pressure-Dependent Lattice Dynamical Study;2023

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