Antimonide-based diodes for terahertz mixers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2946658
Reference12 articles.
1. Energy bandgap and lattice constant contours of iii–v quaternary alloys
2. Band parameters for III–V compound semiconductors and their alloys
3. New approach to the design and the fabrication of THz Schottky barrier diodes
4. Measurements on a 215-GHz subharmonically pumped waveguide mixer using planar back-to-back air-bridge Schottky diodes
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1. Heterodyne terahertz detection through electronic and optoelectronic mixers;Reports on Progress in Physics;2020-05-21
2. Molecular beam epitaxial growth of AlSb/InAsSb heterostructures;Applied Surface Science;2014-09
3. Optical switching of carrier transport in polymeric transistors with photochromic spiropyran molecules;Journal of Materials Chemistry C;2013
4. Three-dimensional shaping of sub-micron GaAs Schottky junctions for zero-bias terahertz rectification;Applied Physics Letters;2011-12-26
5. Antimonide-based pN terahertz mixer diodes;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-05
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