Raman scattering study of InAs/GaInSb strained layer superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350174
Reference19 articles.
1. Proposal for strained type II superlattice infrared detectors
2. Long‐wavelength infrared detectors based on strained InAs–Ga1−xInxSb type‐II superlattices
3. Observation of semiconductor‐semimetal transition in InAs‐GaSb superlattices
4. Optical absorption and x‐ray diffraction in narrow‐band‐gap InAs/GaSb superlattices
5. Growth and characterization of InAs/Ga1−xInxSb strained‐layer superlattices
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1. Pixelated GaSb solar cells on silicon by membrane bonding;Applied Physics Letters;2018-09-17
2. Composition and surface deformation variance in highly strained InxGa1−xSb structures on (100) GaSb;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-03
3. Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems;Nanoscale Research Letters;2015-04-29
4. Effects of Lattice Relaxation on Composition and Morphology in Strained In x Ga1−x As y Sb1−y Epitaxial Layers;Journal of Electronic Materials;2015-02-10
5. Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05
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