On the nitridation of silicon by low energy nitrogen bombardment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122151
Reference13 articles.
1. Formation of thin silicon films using low energy oxygen ion implantation
2. A SIMS-XPS study on silicon and germanium under O+2 bombardment
3. In situsecondary ion mass spectrometry study of the surface oxidation of silicon using18O tracer
4. Angular dependence of silicon oxide formation and gold segregation due to low-energy O2+ implantation
5. Oxidation of silicon by low energy oxygen bombardment
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1. Laser-assisted atom probe tomography of 15N-enriched nitride thin films for analysis of nitrogen distribution in silicon-based structure;Applied Surface Science;2015-09
2. Ultra-shallow arsenic implant depth profiling using low-energy nitrogen beams;Applied Surface Science;2004-06
3. Dynamics of the ion beam induced nitridation of silicon;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-07
4. Electrical transients in the ion-beam-induced nitridation of silicon;Applied Physics Letters;2001-05-28
5. Low energy O2+ and N2+ beam-induced profile broadening effects in Si;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-05
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