A SIMS-XPS study on silicon and germanium under O+2 bombardment
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. The effect of the angle of incidence on secondary ion yields of oxygen-bombarded solids
2. Compilation of Energy Band Gaps in Elemental and Binary Compound Semiconductors and Insulators
3. Electron orbital energies of oxygen adsorbed on silicon surfaces and of silicon dioxide
4. The Effect of Work Function Change on the Sputtering of Si+from Oxidized Si Surfaces
5. Summary Abstract: The origin of oxidation induced enhancement of Si+ sputter yield in SIMS
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