Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement ofx-Reference-Cited by-同舟云学术

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Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement ofx

Published:1987-08-17 Issue:7 Volume:51 Page:505-507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kuech T. F.,Wolford D. J.,Potemski R.,Bradley J. A.,Kelleher K. H.,Yan D.,Farrell J. Paul,Lesser P. M. S.,Pollak F. H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.98380

Reference21 articles.

1. Injection Electroluminescence in (AlxGa1−x)As Diodes of Graded Energy Gap

2. Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy Gaps

3. Ga-Al-As: Phase, thermodynamic and optical properties

4. Photoluminescence of AlxGa1−xAs

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