Comprehensive analysis of the composition determination in epitaxial Al Ga As films: A multitechnique approach-Reference-Cited by-同舟云学术

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Comprehensive analysis of the composition determination in epitaxial Al Ga As films: A multitechnique approach

Published:2021-03 Issue: Volume:123 Page:105469
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Gonzalez M.,Rozas G.,Salazar Alarcon L.,Simonetto M.,Bruchhausen A.,Zampieri G.,Baruj A.,Prado F.,Pastoriza H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference42 articles.

1. Dosage de l’aluminium par spectrometrie d’absortion atomique et diffraction des rayons X dans des couches epitaxiees par jets moleculaires de Ga1-xAlxAs;Baudet;Mater. Res. Bull,1983

2. High-accuracy determination of epitaxial AlGaAs composition with inductively coupled plasma optical emission spectroscopy;Bertness;J. Vac. Sci. Technol. B,2006

3. Raman investigation of anharmonicity and disorder-induced effects in Ga1-xAlxAs epitaxial layers;Jusserand;Phys. Rev. B,1981

4. Accurate electron probe determination of aluminum composition in (Al,Ga)As and correlation with photoluminescence peak;Miller;J. Appl. Phys.,1985

5. Measurement of absolute Al concentration in AlxGa1-xAs;Yan;Nucl. Instrum. Methods B,1987

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence emission in the red band at low temperatures in type-island layers of the Al0.32Ga0.68 As/Al0.29Ga0.71As/GaAs structure obtained via liquid phase epitaxy, and its description by the mechanism of Stranski-Krastanov growth;Optical Materials;2022-12

2. Effects of induced strain on the Raman spectra of AlxGa1−xAs compounds;Physica B: Condensed Matter;2022-10

3. Inducing Strong Light–Matter Coupling and Optical Anisotropy in Monolayer MoS₂ with High Refractive Index Nanowire;ACS Applied Materials & Interfaces;2022-06-28

4. Effect of thallium (Tl) substitution for indium (In) on ellipsometric characteristics of TlInSe2 single crystals;Materials Science in Semiconductor Processing;2021-11

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