Monitoring of early catastrophic optical damage in laser diodes based on facet reflectivity measurement-Reference-Cited by-同舟云学术

Monitoring of early catastrophic optical damage in laser diodes based on facet reflectivity measurement

Published:2017-05-29 Issue:22 Volume:110 Page:223503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang S. Y.¹^ORCID,Feng S. W.¹,Zhang Y. M.¹,An Z. F.²,Yang H. W.²,He X.¹,Wang X.¹,Qiao Y. B.³

Affiliation:

1. Faculty of Information Technology, School of Microelectronics, Beijing University of Technology, Beijing 100124, China

2. Hebei Semiconductor Institute, Shijiazhuang 050051, China

3. State Grid Key Laboratory of Power Chip Design and Analysis Technology, Beijing Smart-Chip Microelectronics Technology Company Limited, Beijing 100031, China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4984598

Reference15 articles.

1. Catastrophic damage of AlxGa1−xAs double‐heterostructure laser material

2. Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs‐GaAs laser facets

3. Defect evolution during catastrophic optical damage of diode lasers

4. Transient thermal characteristics related to catastrophic optical damage in high power AlGaAs/GaAs laser diodes

5. Transient surface modifications during singular heating events at diode laser facets

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