Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High‐Power Diode Lasers-Reference-Cited by-同舟云学术

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Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High‐Power Diode Lasers

Published:2021-12-13 Issue: Volume: Page:2100527
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Hempel Martin¹^ORCID,Dadgostar Shabnam²^ORCID,Jiménez Juan²^ORCID,Kernke Robert³,Gollhardt Astrid¹^ORCID,Tomm Jens W.³^ORCID

Affiliation:

1. System Integration and Interconnection Technologies Fraunhofer Institute for Reliability and Microintegration IZM 13355 Berlin Germany

2. GdS Optronlab Ed.Lucia Universidad de Valladolid Paseo de Belén 19 47011 Valladolid Spain

3. Solid State Light Sources Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie Max-Born-Str. 2A 12489 Berlin Germany

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100527

Reference60 articles.

1. Semiconductor Laser Engineering, Reliability and Diagnostics

2. Pump diode lasers

3. Internal self-damage of gallium arsenide lasers

4. Catastrophic Degradation in GaAs Injection Lasers

5. Degradation of injection lasers

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