Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs‐GaAs laser facets-Reference-Cited by-同舟云学术

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Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs‐GaAs laser facets

Published:1992-05-15 Issue:10 Volume:71 Page:4848-4853
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Moser A.,Latta E. E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.350628

Reference24 articles.

1. Degradation of III–V Opto‐Electronic Devices

2. Defect structure introduced during operation of heterojunction GaAs lasers

3. Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasers

4. Degradation and lifetime studies of high‐power single‐quantum‐well AlGaAs ridge lasers

5. Degradation of (AlGa)As DH lasers due to facet oxidation

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