Recoil oxygen implants and thermal redistribution of oxygen in through‐oxide arsenic‐implanted Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92795
Reference7 articles.
1. An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targets
2. The effects of the recoil-implanted oxygen in Si on the electrical activation of As after through-oxide implantation
3. Gettering of mobile oxygen and defect stability within back‐surface damage regions in Si
4. Low‐temperature redistribution and gettering of oxygen in silicon
5. Redistribution of oxygen within damage regions of boron‐implanted silicon
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Room temperature synthesis of HfO2/HfO x heterostructures by ion-implantation;Nanotechnology;2018-08-15
2. Oxygen gettering in low-energy arsenic or antimony ion implanted Cz-silicon;physica status solidi (c);2014-09-17
3. Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon;Semiconductor Science and Technology;2014-04-16
4. Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in Silicon;Advanced Materials Research;2013-11
5. Solutions to Gate Oxide Integrity on TFSOI Substrates Caused by PMOS Threshold-Voltage Implant;MRS Proceedings;1998-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3