1. Influence of16O,12C,14N, and noble gases on the crystallization of amorphous Si layers
2. Residual defects in Si produced by recoil implantation of oxygen
3. M. Tamura, N. Natsuaki, M. Miyao, and T. Tokuyama,Ion Implantation in Semiconductors1976, edited by F. Chernow, J. A. Borders, and D. K. Brice (Plenum, New York, 1976).
4. T. Izumi, M. Satoh, M. Kawamura, and T. Matsusmori, Proceedings of the International Conference on Ion Beam Modification of Materials, Budapest, 1978 (unpublished).
5. Y. Yaegashi, Technical Digest of 25th Spring Meeting of the Japan Society of Applied Physics, 1978 (unpublished).