Oxygen-related defects in O+-implanted 6H–SiC studied by a monoenergetic positron beam
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371536
Reference26 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. ion-implanted junctions and conducting layers in SiC
3. Anomalous residual damage in Si after annealing of ``through‐oxide'' arsenic implantations
4. The effects of the recoil-implanted oxygen in Si on the electrical activation of As after through-oxide implantation
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1. PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation;Nuclear Science and Techniques;2017-06-29
2. Oxygen-Atom Defects In 6H Silicon Carbide Implanted Using 24- MeV O[sup 3+] Ions Measured Using Three-Dimensional Positron Annihilation Spectroscopy System (3DPASS);AIP Conference Proceedings;2011
3. Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam;Japanese Journal of Applied Physics;2010-05-20
4. Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams;Journal of Applied Physics;2007-10-15
5. Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams;Journal of Applied Physics;2005-02-15
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