Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam-Reference-Cited by-同舟云学术

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Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam

Published:2010-05-20 Issue:5 Volume:49 Page:051301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Uedono Akira,Tsutsui Kazuo,Ishibashi Shoji,Watanabe Hiromichi,Kubota Shoji,Nakagawa Yasumasa,Mizuno Bunji,Hattori Takeo,Iwai Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference35 articles.

1. Plasma source ion‐implantation technique for surface modification of materials

2. New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasma

3. Plasma immersion ion implantation—a fledgling technique for semiconductor processing

4. Measurement and analysis of deposition-etch characteristics of BF3 plasma immersion ion implantation

5. Recent developments and applications of plasma immersion ion implantation

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1. Effects of prior austenite grain size on impression creep and microstructure in simulated heat affected zones of boron modified P91 steels;Materials Chemistry and Physics;2020-07

2. Analyses of three-dimensional atomic arrangements of impurities doped in Si relating to electrical activity by spectro-photoelectron holography;Japanese Journal of Applied Physics;2020-01-01

3. First-principles calculation of X-ray photoelectron spectroscopy binding energy shift for nitrogen and phosphorus defects in 3C-silicon carbide;Japanese Journal of Applied Physics;2019-05-22

4. First-principles X-ray photoelectron spectroscopy binding energy shift calculation for boron and aluminum defects in 3C-silicon carbide;Japanese Journal of Applied Physics;2019-02-18

5. Characterization of the distribution of defects introduced by plasma exposure in Si substrate;Journal of Vacuum Science & Technology A;2019-01

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