Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1845575
Reference30 articles.
1. Growth and applications of Group III-nitrides
2. Unusual properties of the fundamental band gap of InN
3. Optical bandgap energy of wurtzite InN
4. Optical properties of Si-doped InN grown on sapphire (0001)
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1. Defects in nitrides, positron annihilation spectroscopy;SPIE Proceedings;2013-02-22
2. Fe-doped InN layers grown by molecular beam epitaxy;Applied Physics Letters;2012-10-22
3. On the formation of vacancy defects in III-nitride semiconductors;Journal of Crystal Growth;2012-07
4. Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN;Physical Review B;2011-09-02
5. Cu diffusion-induced vacancy-like defects in freestanding GaN;New Journal of Physics;2011-01-21
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