Fe-doped InN layers grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Fe-doped InN layers grown by molecular beam epitaxy

Published:2012-10-22 Issue:17 Volume:101 Page:171905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Xinqiang,Liu Shitao,Ma Dingyu,Zheng Xiantong,Chen Guang,Xu Fujun,Tang Ning,Shen Bo,Zhang Peng,Cao Xingzhong,Wang Baoyi,Huang Sen,Chen Kevin J.,Zhou Shengqiang,Yoshikawa Akihiko

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4764013

Reference22 articles.

1. Band gaps of InN and group III nitride alloys

2. Molecular beam epitaxy growth of GaN, AlN and InN

3. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

4. Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

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1. Advances in applications of positron annihilation spectroscopy to investigating semiconductor microstructures;Acta Physica Sinica;2017

2. Microstructure and magnetic properties of In1−xCrxN thin films;Materials Science in Semiconductor Processing;2015-03

3. A study of vacancy defects related to gray tracks in KTiOPO4 (KTP) using positron annihilation;AIP Advances;2014-12

4. Systematic investigation on Cadmium-incorporation in Li2FeSiO4/C cathode material for lithium-ion batteries;Scientific Reports;2014-05-27

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