Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon-Reference-Cited by-同舟云学术

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Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon

Published:2014-04-16 Issue:5 Volume:29 Page:055008
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Oberemok O,Kladko V,Litovchenko V,Romanyuk B,Popov V,Melnik V,Sarikov A,Gudymenko O,Vanhellemont J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=5/a=055008/pdf

Reference25 articles.

1. Diffusion and segregation of shallow As and Sb junctions in silicon

2. Formation of shallow source/drain extensions for metal–oxide–semiconductor field-effect-transistors by antimony implantation

3. Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon

4. Transient enhanced diffusion of arsenic in silicon

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