Structural inhomogeneity and silicon enrichment of buried SiO2 layers formed by oxygen ion implantation in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366025
Reference75 articles.
1. Irradiation-induced ESR active defects in SIMOX structures
2. Electron spin resonance of defects in silicon‐on‐insulator structures formed by oxygen implantation: Influence of γ irradiation
3. SIMOX with epitaxial silicon: point defects and positive charge
4. Comparative study of radiation‐induced electrical and spin active defects in buried SiO2layers
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