Electron spin resonance of defects in silicon‐on‐insulator structures formed by oxygen implantation: Influence of γ irradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348934
Reference37 articles.
1. SIMOX SOI for integrated circuit fabrication
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4. Influence of oxygen implantation conditions on the properties of a high‐temperature‐annealed silicon‐on‐insulator material
5. Silicon‐on‐insulator material formed by oxygen implantation and high‐temperature annealing: Carrier transport, oxygen activity, and interface properties
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