Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2338127
Reference11 articles.
1. Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxy
2. Surface segregation of Sn during MBE of n‐type GaAs established by SIMS and AES
3. Tin‐doping effects in GaAs films grown by molecular beam epitaxy
4. Influence of growth conditions on tin incorporation in GaAs grown by molecular beam epitaxy
5. Growth temperature dependence in molecular beam epitaxy of gallium arsenide
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