Enhanced interface mixing of Fe∕Si bilayers on preamorphized silicon substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2432952
Reference28 articles.
1. Amorphization of Si(001) by ultra low energy (0.5–5 keV) ion implantation observed with high-resolution RBS
2. Interstitial defects in silicon from 1–5 keV Si+ ion implantation
3. Preparation of atomically clean and flat Si(1 0 0) surfaces by low-energy ion sputtering and low-temperature annealing
4. Enhanced solid-phase growth of β-FeSi2 by pre-amorphization
5. The effect of preamorphization energy on ultrashallow junction formation following ultrahigh-temperature annealing of ion-implanted silicon
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