Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay-Reference-Cited by-同舟云学术

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Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay

Published:2011-05 Issue:9 Volume:269 Page:881-885
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Novaković M.,Zhang K.,Popović M.,Bibić N.,Hofsäss H.,Lieb K.P.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference41 articles.

1. Compound Phase Formation in Thin Film Structures

2. Metal Silicides in CMOS Technology: Past, Present, and Future Trends

3. T. Kikkawa, K. Inoue, K. Imai, in: L.J. Cheng (Ed.), Silicide Technology for Integrated Circuits, The Institution of Electrical Engineers, London, 2004, pp. 77–95.

4. Silicide formation in cobalt/amorphous silicon, amorphous CoSi and bias-induced CoSi films

5. On the thermodynamical driving force during ion mixing of the Co‐Si system

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Xenon-ion irradiation of Co/Si bilayers: Magnetic and structural properties;Applied Surface Science;2018-07

2. Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing;Applied Surface Science;2014-03

3. Ion-beam-induced mixing in a Si/Co/Si system involving ultrathin layers: A grazing-incidence X-ray standing-wave study;physica status solidi (a);2012-06-05

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