Correlation between the photoreflectance response atE1and carrier concentration inn‐ andp‐GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348691
Reference18 articles.
1. The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs
2. Electroreflectance of ion‐implanted GaAs
3. Mechanism of compensation in heavily silicon‐doped gallium arsenide grown by molecular beam epitaxy
4. Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growth
5. Compensation mechanisms in n+-GaAs doped with silicon
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2. Basics of Optical Spectroscopy: Transmission and Reflection Measurements, Their Analysis, and Related Techniques;Spectroscopic Analysis of Optoelectronic Semiconductors;2016
3. Photoreflectance of Zn:AlxGa1-xAs at theE1Transition Energy as a Function of Carrier Concentration and Aluminum Composition;Physica Scripta;2001-01-01
4. Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence;Journal of Applied Physics;1999-12
5. Comparison between optical techniques for the measurement of the surface electric field in (100) oriented GaAs;Applied Physics Letters;1998-09-14
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