Correlation between the photoreflectance response atE1and carrier concentration inn‐ andp‐GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348691
Reference18 articles.
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4. Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growth
5. Compensation mechanisms in n+-GaAs doped with silicon
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3. Basics of Optical Spectroscopy: Transmission and Reflection Measurements, Their Analysis, and Related Techniques;Spectroscopic Analysis of Optoelectronic Semiconductors;2016
4. Photoreflectance of Zn:AlxGa1-xAs at theE1Transition Energy as a Function of Carrier Concentration and Aluminum Composition;Physica Scripta;2001-01-01
5. Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence;Journal of Applied Physics;1999-12
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