Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371669
Reference17 articles.
1. Multiwafer molecular beam epitaxy for high volume production of GaAs/AlGaAs heterojunction bipolar transistor wafers
2. Commercial heterojunction bipolar transistor production by molecular beam epitaxy
3. Characterization of GaAs/Ga1−xAlxAs heterojunction bipolar transistor structures using photoreflectance
4. Qualification of OMVPE AlGaAs/GaAs HBT structures using nondestructive photoreflectance spectroscopy
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1. Non-destructive, room temperature characterization of wafer-sized III-V semiconductor device structures using contactless electromodulation and wavelength-modulated surface photovoltage spectroscopy;physica status solidi (a);2005-05
2. Nondestructive determination of layers producing Franz-Keldysh oscillations appearing in photoreflectance spectra of heterojunction bipolar transistor structures based on their line-shape analysis;Journal of Applied Physics;2004-08-15
3. n-AlGaAs/p-GaAs/n-GaN HETEROJUNCTION BIPOLAR TRANSISTOR: THE FIRST TRANSISTOR FORMED VIA WAFER FUSION;International Journal of High Speed Electronics and Systems;2004-03
4. Interference Effect on the Phase of Franz–Keldysh Oscillations in GaAs/AlGaAs Heterostructures;Japanese Journal of Applied Physics;2003-11-10
5. Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor;Applied Physics Letters;2003-02-03
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