Growth of (100) oriented CdTe on Si using Ge as a buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111105
Reference17 articles.
1. Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100)
2. Current status of direct growth of CdTe and HgCdTe on silicon by molecular-beam epitaxy
3. The film/substrate orientation relationships of CdTe grown on Si and GaAs by low pressure metalorganic chemical vapour deposition
4. Growth of (111) CdTe on GaAs/Si and Si substrates for HgCdTe epitaxy
5. MOCVD grown CdZn Te/GaAs/Si substrates for large-area HgCdTe IRFPAs
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1. Effect of annealing on the structural, compositional and optical properties of CdTe films;Materials Today: Proceedings;2021
2. Characterization of (211) and (100) CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy;Journal of Electronic Materials;2017-08-02
3. 4 Surface and Chemical Considerations in Heteroepitaxy;Heteroepitaxy of Semiconductors;2016-09-15
4. Heteroepitaxy of Ge on Cube-Textured Ni(001) Foils Through CaF2 Buffer Layer;MRS Advances;2016-07-15
5. A Structural Investigation of CdTe(001) Thin Films on GaAs/Si(001) Substrates by High-Resolution Electron Microscopy;Journal of Electronic Materials;2012-02-24
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