The film/substrate orientation relationships of CdTe grown on Si and GaAs by low pressure metalorganic chemical vapour deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Semiconductors and Semimetals, Vol. 13, Cadmium Telluride;Zanio,1978
2. Photoluminescence from CdTe/sapphire films prepared by molecular beam epitaxy
3. Growth of CdTe films on silicon by molecular beam epitaxy
4. Molecular beam epitaxy of CdTe and Hg1-xCdxTe ON GaAs (100)
5. Low defect density CdTe(111)‐GaAs(001) heterostructures by molecular beam epitaxy
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoemission studies of the interactions of CdTe and Te with Si(100);Surface Science;1996-07
2. Electrons on CdTe(110) surface;Journal of Electron Spectroscopy and Related Phenomena;1995-12
3. Surface Related Electronic States on CdTe(110) Observed by Means of Optical Spectroscopy;Acta Physica Polonica A;1995-11
4. Use of germanium interfacial layer for the hetero-epitaxial growth of CdTe on Si substrates;Journal of Crystal Growth;1994-04
5. Growth of (100) oriented CdTe on Si using Ge as a buffer layer;Applied Physics Letters;1994-01-31
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