Interfacial intermixing and arsenic incorporation in thin InP barriers embedded in In0.53Ga0.47As
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367189
Reference11 articles.
1. Investigation of MOVPE-grown In0.53Ga0.47 As/InP multi-quantum wells by Raman spectroscopy and X-ray diffractometry
2. Investigation of MOVPE-grown In0.53Ga0.47 As/InP multi-quantum wells by Raman spectroscopy and X-ray diffractometry
3. Investigation of GaInAs/InP superlattices by electron microscopy, X-ray diffraction and spectroscopic ellipsometry
4. Structural investigation of short period GaInAs/InP superlattices
5. Studies of thin strained InAs, AlAs, and AlSb layers by spectroscopic ellipsometry
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