Studies of thin strained InAs, AlAs, and AlSb layers by spectroscopic ellipsometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361137
Reference21 articles.
1. Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak‐to‐valley current ratios of 30 at room temperature
2. High-speed resonant-tunneling diodes made from the In0.53Ga0.47As/AlAs material system
3. Effect of lattice-mismatched growth on InAs/AlSb resonant-tunneling diodes
4. New developments in spectroellipsometry: the challenge of surfaces
5. Growth of AlxGa1−xAs parabolic quantum wells by real‐time feedback control of composition
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