Investigation of MOVPE-grown In0.53Ga0.47 As/InP multi-quantum wells by Raman spectroscopy and X-ray diffractometry-Reference-Cited by-同舟云学术

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Investigation of MOVPE-grown In0.53Ga0.47 As/InP multi-quantum wells by Raman spectroscopy and X-ray diffractometry

Published:1993-11 Issue:2-3 Volume:21 Page:161-164
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Finders J.,Keuter M.,Gnoth D.,Geurts J.,Woitok J.,Kohl A.,Müller R.,Heime K.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. Growth conditions and characterization of InGaAs/GaAs strained layers superlattices

2. Evidence for intrinsic interfacial strain in lattice-matchedInxGa1−xAs/InP heterostructures

3. Characterization of interface structure in GaInAs/InP superlattices by means of X-ray diffraction

4. Single longitudinal‐mode optical phonon scattering in Ga0.47In0.53As

5. Raman scattering in In1−xGaxAsyP1−yquaternary alloys

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation;Materials Science in Semiconductor Processing;2023-01

2. Interfacial intermixing and arsenic incorporation in thin InP barriers embedded in In0.53Ga0.47As;Journal of Applied Physics;1998-04-15

3. MOVPE growth of III–V compounds for optoelectronic and electronic applications;Microelectronics Journal;1996-07

4. Electrical transport properties of narrow InGaAs/InP quantum wells;Semiconductor Science and Technology;1996-02-01

5. The characterization of semiconductor layer and interface quality with special reference to raman spectroscopy;Progress in Crystal Growth and Characterization of Materials;1996-01

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