Investigation of GaInAs/InP superlattices by electron microscopy, X-ray diffraction and spectroscopic ellipsometry-Reference-Cited by-同舟云学术

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Investigation of GaInAs/InP superlattices by electron microscopy, X-ray diffraction and spectroscopic ellipsometry

Published:1995-04-01 Issue:4 Volume:10 Page:492-499
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Amiotti M,Guizzetti G,Patrini M,Francesio L,Franzosi P,Mattei G,Landgren G

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Optimal growth interrupts for very high quality InGaAs(P)/InP superlattices grown by MOVPE

2. Influence of the gas switching sequence on the optical properties of ultrathin InGaAs/InP quantum wells

3. Spectroscopic ellipsometry studies of excitonic features and optical functions of AlxGa1−xAs/GaAs multiple quantum well structures

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Size effects and strain state ofGa1−xInxAs/GaAsmultiple quantum wells: Monte Carlo study;Physical Review B;2008-10-28

2. Atomic structure of CaF2/MnF2–Si(1 1 1) superlattices from X-ray diffraction;Applied Surface Science;2007-02

3. Interfacial intermixing and arsenic incorporation in thin InP barriers embedded in In0.53Ga0.47As;Journal of Applied Physics;1998-04-15

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