Hybrid Si molecular beam epitaxial regrowth for a strained Si1−xGex/Si single‐quantum‐well electroluminescent device
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110492
Reference13 articles.
1. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
2. Near‐band‐gap photoluminescence from pseudomorphic Si1−xGexsingle layers on silicon
3. Optical and structural investigation of SiGe/Si quantum wells
4. Room‐temperature 1.3 μm electroluminescence from strained Si1−xGex/Si quantum wells
5. Spectral blue shift of photoluminescence in strained‐layer Si1−xGex/Si quantum well structures grown by gas‐source Si molecular beam epitaxy
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