Normal-incidence Ge quantum-dot photodetectors at 1.5 μm based on Si substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1449525
Reference18 articles.
1. Hybrid Si molecular beam epitaxial regrowth for a strained Si1−xGex/Si single‐quantum‐well electroluminescent device
2. Room‐temperature electroluminescence from Si/Ge/Si1−xGex quantum‐well diodes grown by molecular‐beam epitaxy
3. Optimization of Si/sub 1-x/Ge/sub x//Si waveguide photodetectors operating at λ=1.3 μm
4. Si/SiGe heterostructures and devices
5. Normal‐incidence strained‐layer superlattice Ge0.5Si0.5/Si photodiodes near 1.3 μm
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